发明名称 |
Semiconductor Device and Electric Power Conversion System Using The Same |
摘要 |
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
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申请公布号 |
US2013020634(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213553431 |
申请日期 |
2012.07.19 |
申请人 |
HITACHI, LTD.;WATANABE SO;SHIRAISHI MASAKI;SUZUKI HIROSHI;MORI MUTSUHIRO |
发明人 |
WATANABE SO;SHIRAISHI MASAKI;SUZUKI HIROSHI;MORI MUTSUHIRO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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