发明名称 MEMORY STORAGE DEVICE, MEMORY CONTROLLER THEREOF, AND METHOD FOR PROGRAMMING DATA THEREOF
摘要 A memory storage device, a memory controller thereof, and a method for programming data thereof are provided. The memory storage device having an error checking and correcting (ECC) circuit and a rewritable non-volatile memory chip is coupled to a host system. The method includes determining whether write data to be written into the rewritable non-volatile memory chip belongs to a specific type. The method also includes generating at least one first type ECC code with a first length by the ECC circuit according to the write data if the write data belongs to the specific type. The method further includes generating at least one second type ECC code with a second length by the ECC circuit according to the write data if the write data does not belong to the specific type. In which, the first length is longer than the second length.
申请公布号 US2013019142(A1) 申请公布日期 2013.01.17
申请号 US201113286226 申请日期 2011.11.01
申请人 PHISON ELECTRONICS CORP.;TEO WEI-CHEN;YANG PI-CHI 发明人 TEO WEI-CHEN;YANG PI-CHI
分类号 H03M13/05;G06F11/10 主分类号 H03M13/05
代理机构 代理人
主权项
地址