| 摘要 |
<p>Provided is a method for preparing a fully silicided metal gate bulk silicon multi-gate fin field effect transistor, comprising: forming a fin on a semiconductor substrate (101); forming a gate stack structure on the top and side of the fin; forming a source/drain extension region structure (111) in the fin at two sides of the gate stack structure; forming a source/drain structure (113) at two sides of the source/drain extension region structure (111); silicifying a source/drain region; forming a silicided metal gate electrode (117); and performing contact and metallization. By means of the method, a self-heating effect and a floating body effect of a semiconductor on insulator (SOI) device are eliminated, and disadvantages of a polysilicon gate electrode such as a polysilicon depletion effect, a boron penetration effect, and a great series resistance are overcome. The method is well compatible with a complementary metal oxide semiconductor (CMOS) plane process, and by means of the method, the integration is easy.</p> |
