MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element capable of stably operating, and to provide a manufacturing method of the same.

SOLUTION: A magnetoresistance effect element of one embodiment includes: a bottom electrode; a first magnetic layer; a first metal layer; a first interfacial magnetic layer; a non-magnetic layer; a second interfacial magnetic layer; a second metal layer; a second magnetic layer; and an upper electrode layer. The first magnetic layer is disposed on the bottom electrode and contains first metal atoms. The first metal layer is disposed on the first magnetic layer and contains the first metal atoms. The first interfacial magnetic layer is disposed on the first metal layer. The non-magnetic layer is disposed on the first interfacial magnetic layer. The second interfacial magnetic layer is disposed on the non-magnetic layer. The second metal layer is disposed on the second interfacial magnetic layer and contains second metal atoms. The second magnetic layer is disposed on the second metal layer and contains the second metal atoms. The upper electrode layer is disposed on the second magnetic layer. The first interfacial magnetic layer includes an amorphous metal layer in an interface on an opposite side of the non-magnetic layer side.

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