发明名称 |
Semiconductor device with high K dielectric control terminal spacer structure |
摘要 |
A semiconductor device including a control terminal sidewall spacer structure made of a high-K dielectric material. The semiconductor device includes a control terminal where the spacer structure is a sidewall spacer structure for the control terminal. The semiconductor device includes current terminal regions located in a substrate. In some examples, the spacer structure has a height that is less than the height of the control terminal. In some examples, the spacer structure includes portions located over the regions of the substrate between the first current terminal region and the second current terminal region.
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申请公布号 |
US8349684(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20090622115 |
申请日期 |
2009.11.19 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION;CAI JIN;MAJUMDAR AMLAN;MURALIDHAR RAMACHANDRAN;SHAHIDI GHAVAM G. |
发明人 |
CAI JIN;MAJUMDAR AMLAN;MURALIDHAR RAMACHANDRAN;SHAHIDI GHAVAM G. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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