发明名称 |
Semiconductor device including a DC-DC converter |
摘要 |
The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
|
申请公布号 |
US8350372(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201213372227 |
申请日期 |
2012.02.13 |
申请人 |
RENESAS ELECTRONICS CORPORATION;SATOU YUKIHIRO;UNO TOMOAKI;MATSUURA NOBUYOSHI;SHIRAISHI MASAKI |
发明人 |
SATOU YUKIHIRO;UNO TOMOAKI;MATSUURA NOBUYOSHI;SHIRAISHI MASAKI |
分类号 |
H01L23/495;H01L25/07;H01L21/8234;H01L23/02;H01L23/50;H01L25/00;H01L25/16;H01L25/18;H01L27/04;H01L27/088;H01L29/78;H02M3/155;H02M3/158 |
主分类号 |
H01L23/495 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|