| 摘要 |
A solid-state imaging device includes a semiconductor substrate, a connection portion, and one or more first photoelectric conversion units formed in the semiconductor substrate. The semiconductor substrate has a back side and a front side. The back side is a light incident surface, and the front side is a circuit-forming surface. The connection portion is connected to a contact plug that transfers signal charges generated on the back side of the semiconductor substrate into the semiconductor substrate. The connection portion has a peak of an impurity concentration distribution near an interface of the semiconductor substrate on the back side of the semiconductor substrate.
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