发明名称 |
PROCESS AND APPARATUS FOR FABRICATION OF A SEMICONDUCTOR LAYER |
摘要 |
The invention relates to a method and a device for producing a semiconductor layer. The problem addressed is that of increasing the deposition rate of the layer constituents and significantly improving the efficiency of a resulting solar cell. At the same time, the material costs are intended to be reduced. The problem is solved by virtue of the fact that, in a vacuum chamber, metal evaporator sources release Cu, In and/or Ga or the chalcogenide compounds, the latter are focused as metal vapor jets onto the substrate, and Se and/or S emerge(s) in an ionized fashion from a chalcogen low-energy wide-beam ion source and this beam is focused onto the surface of the substrate in such a way that it overlaps the metal vapor jets. A device for carrying out the method is described. |
申请公布号 |
EP2539942(A1) |
申请公布日期 |
2013.01.02 |
申请号 |
EP20100706524 |
申请日期 |
2010.02.22 |
申请人 |
SOLARION AG |
发明人 |
ZACHMANN, HENDRIK;OTTE, KARSTEN;NEUMANN, HORST;SCHOLZE, FRANK;PISTOL, LUTZ |
分类号 |
H01L31/032;C23C14/06;C23C14/22;H01L21/02 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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