发明名称 |
Group III-nitride enhancement mode field effect devices and fabrication methods |
摘要 |
Structures and fabrication processes are described for group III-nitride enhancement mode field effect devices in which a two-dimensional electron gas is present at or near the interface between a pair of active layers that include a group III-nitride barrier layer and a group III-nitride semiconductor layer. The barrier layer has a band gap wider than the band gap of the adjacent underlying semiconductor layer. The two-dimensional electron gas is induced by providing one or more layers disposed over the barrier layer. A gate electrode is in direct contact with the barrier layer. Ohmic contacts for source and drain electrodes are in direct contact either with the barrier layer or with a semiconductor nitride layer disposed over the barrier layer.
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申请公布号 |
US8344421(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100778011 |
申请日期 |
2010.05.11 |
申请人 |
IQE RF, LLC;GAO XIANG;GUO SHIPING |
发明人 |
GAO XIANG;GUO SHIPING |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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