| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a novel structure, which can hold memory contents even under a state where a power is not supplied and has no limitation in the number of writing times. <P>SOLUTION: A semiconductor device integrally comprises: a storage circuit using a transistor (in a broader sense, a transistor having sufficiently less OFF-state current) that uses an oxide semiconductor; and a peripheral circuit such as a driving circuit using a transistor (in other words, a transistor capable of sufficiently high-speed operation) that uses a material other than the oxide semiconductor. By arranging the peripheral circuit in a lower part and arranging the storage circuit in an upper part, area reduction and downsizing of the semiconductor device can be achieved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
