发明名称 |
In-Situ Formation of Silicon and Tantalum Containing Barrier |
摘要 |
A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
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申请公布号 |
US2012326312(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201113167857 |
申请日期 |
2011.06.24 |
申请人 |
JANGJIAN SHIU-KO;WANG TING-CHUN;WU SZU-AN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
JANGJIAN SHIU-KO;WANG TING-CHUN;WU SZU-AN |
分类号 |
H01L21/28;B82Y40/00;H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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