发明名称 ULTRA-HIGH-SPEED LASER ANNEALING WITH REDUCED PATTERN DENSITY EFFECT IN MANUFACTURE OF INTEGRATED CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To reduce the pattern density effect with poly-gate laser annealing. <P>SOLUTION: Laser annealing comprises a step of scanning a patterned surface 12 of a substrate with at least one first laser beam 168. This at least one first laser beam heats the patterned surface up to non-melting temperature T<SB POS="POST">nonmelt</SB>, which is within 400&deg;C from melting temperature T<SB POS="POST">melt</SB>. This method further comprises a step of scanning the patterned surface with at least one second laser beam 268 in relation with the first laser beam. The at least one second laser beam is a pulsed form and heats the patterned surface up to the melting temperature from the non-melting temperature prepared by the at least one first laser beam. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256879(A) 申请公布日期 2012.12.27
申请号 JP20120112240 申请日期 2012.05.16
申请人 ULTRATECH INC 发明人 WANG YAN;ANDREW M HAWRYLUK
分类号 H01L21/268 主分类号 H01L21/268
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