发明名称 METHOD FOR FORMING PATTERN OF METAL OXIDE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME
摘要 Disclosed are a method for forming a metal oxide pattern and a method of manufacturing a thin film transistor using the patterned metal oxide. The method for forming a metal oxide pattern includes: preparing an ink composition including at least one metal oxide precursor or metal oxide nanoparticle, and a solvent; ejecting the ink composition on a substrate to form a pattern on the substrate; and photosintering the formed pattern. Herein, the metal oxide precursor is ionic.
申请公布号 US2012329209(A1) 申请公布日期 2012.12.27
申请号 US201213527741 申请日期 2012.06.20
申请人 SONG YONG-WON;HONG JAE-MIN;LIM JUNG AH;KIM HAK-SUNG;KWON SEONG-JI;KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 SONG YONG-WON;HONG JAE-MIN;LIM JUNG AH;KIM HAK-SUNG;KWON SEONG-JI
分类号 H01L21/368 主分类号 H01L21/368
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