发明名称 |
METHOD FOR FORMING PATTERN OF METAL OXIDE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME |
摘要 |
Disclosed are a method for forming a metal oxide pattern and a method of manufacturing a thin film transistor using the patterned metal oxide. The method for forming a metal oxide pattern includes: preparing an ink composition including at least one metal oxide precursor or metal oxide nanoparticle, and a solvent; ejecting the ink composition on a substrate to form a pattern on the substrate; and photosintering the formed pattern. Herein, the metal oxide precursor is ionic.
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申请公布号 |
US2012329209(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213527741 |
申请日期 |
2012.06.20 |
申请人 |
SONG YONG-WON;HONG JAE-MIN;LIM JUNG AH;KIM HAK-SUNG;KWON SEONG-JI;KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
SONG YONG-WON;HONG JAE-MIN;LIM JUNG AH;KIM HAK-SUNG;KWON SEONG-JI |
分类号 |
H01L21/368 |
主分类号 |
H01L21/368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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