| 摘要 |
<p>Disclosed in the present invention is a method for cast production of quasi-monocrystalline silicon, relating to methods therefore, comprising an ingot furnace equipment improvement for a GT furnace or for a four-sides-and-top heater, and growth control of quasi-monocrystalline crystals. The ingot furnace equipment improvement comprises a device for improving the temperature gradient of quasi-monocrystalline silicon ingots. The growth control of the quasi-monocrystalline crystals may comprise one or a combination of methods: a method for arranging silicon material and seed crystal in a furnace, a method for heating chemical materials, and a method for bottom-stabilizing a seed crystal after melting of furnace content. The advantage of the present invention is that, by means of alteration of the thermal field device and materials of the GT furnace or of the four-sides-and-top heater, of the method for casting silicon material and arranging a seed crystal, of the method for heating chemical materials, and of the method for bottom-stabilizing a seed crystal after melting of furnace content, the internal temperature curve of the thermal field is changed and the isothermal curves of the chemical materials and the growth are both improved. The present method resolves problems of quasi-monocrystalline seed crystal melting and problems related to the high cost, low reliability and low success rate of the production thereof.</p> |
