发明名称 DISPLAY DEVICE MANUFACTURED USING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a display device capable of being stably driven for a long time without deteriorating high mobility and high characteristics which an oxide semiconductor has, and displaying an image high in definition and less in image defects. <P>SOLUTION: A display device includes: a luminous layer 413; a pair of electrodes 411, 414 sandwiching the luminous layer; a TFT driving the luminous layer 413 via the pair of electrodes 411, 414 and having source and drain electrodes 410, a gate electrode 406 and an active layer 409; and a scan electrode line 407, a signal electrode line 403 and a first insulating layer 404 which constitute a matrix wiring part. The active layer 409 comprises an oxide including In and Zn, at least a part of the oxide being amorphous. The display device includes a second insulating layer 408 between the active layer 409 and the first insulating layer 404, the second insulating layer having a hydrogen content of less than 3&times;10<SP POS="POST">21</SP>(atoms/cm<SP POS="POST">3</SP>). <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012248883(A) 申请公布日期 2012.12.13
申请号 JP20120180035 申请日期 2012.08.15
申请人 CANON INC 发明人 SANO MASAFUMI;TAKAHASHI KENJI
分类号 H01L29/786;H01L21/316;H01L21/336 主分类号 H01L29/786
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