| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas delivery system which supplies a solid organic metal compound precursor, used for depositing a film of group III-V compound, continuously and uniformly. <P>SOLUTION: The method includes a step for transporting a first flow 202 of carrier gas to a delivery device 102 which accommodates a solid precursor compound. The first flow 202 of carrier gas has a temperature of 20°C or higher. The method further includes a step for transporting a second flow 204 of carrier gas to a position in the downstream of the delivery device 102. The first flow 202 and the second flow 204 are brought together to form a third flow 206, and the dew point of vapor of the solid precursor compound in the third flow 206 is lower than the environmental temperature. The flow directions of first flow 202, second flow 204 and third flow 206 are unidirectional, and not opposed to each other. <P>COPYRIGHT: (C)2013,JPO&INPIT |
