| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve yield by easily forming a pattern of an overlay vernier region. CONSTITUTION: An overlay vernier region(A) is formed in a substrate. A mother vernier(211) is formed in the overlay vernier region. A second inter-metal dielectric(220) is formed on the substrate having the mother vernier. A daughter vernier is formed on the second inter-metal dielectric. A first hard mask(230) is formed in the region in which the mother vernier is formed.</p> |
