发明名称 |
Semiconductor chip with post-passivation scheme formed over passivation layer |
摘要 |
The invention provides a semiconductor chip comprising an interconnecting structure over said passivation layer. The interconnecting structure comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.
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申请公布号 |
US8319354(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US201113181255 |
申请日期 |
2011.07.12 |
申请人 |
LIN MOU-SHIUNG;LO HSIN-JUNG;CHOU CHIEN-KANG;CHOU CHIU-MING;LIN CHING-SAN;MEGICA CORPORATION |
发明人 |
LIN MOU-SHIUNG;LO HSIN-JUNG;CHOU CHIEN-KANG;CHOU CHIU-MING;LIN CHING-SAN |
分类号 |
H01L23/52;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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