| 摘要 |
<p>A lateral field-effect transistor capable of improving switching speed and reducing operationally defective products is provided. A gate wiring (43) has a base (44), a plurality of fingers (45) protruding from the base (44), and a connection (47) connecting tips (46) of adjacent fingers (45). The finger (45) of the gate wiring (43) is arranged between the finger (25) of a source wiring (23) and the finger (35) of a drain wiring (33). The base (44) of the gate wiring (43) is arranged between the base (24) of the source wiring (23) and the fingers (35) of the drain wiring (33) and intersects with the fingers (25) of the source wiring (23), with an insulating film interposed between the base (44) of the gate wiring (43) and the fingers (25).</p> |
