FIELD EFFECT TRANSISTOR, AND MEMORY AND SEMICONDUCTOR CIRCUIT INCLUDING THE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor (FET) with small off current, which is used in a microfabricated semiconductor integrated circuit.

SOLUTION: A field effect transistor includes: a thin oxide semiconductor with a thickness of 1 nm or more and 30 nm or less formed approximately perpendicular to an insulation surface; a gate insulation film formed covering the oxide semiconductor; and stripe-shaped gates each with a width of 10 nm or more and 100 nm or less formed covering the gate insulation film. Since three faces of the thin oxide semiconductor are covered by the gates in this structure, electrons injected from a source and a drain can be effectively eliminated and the space between the source and the drain can be made substantially a depletion region, thereby reducing the off current.

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