发明名称 SYSTEM AND METHODS FOR CONVERTING PLANAR DESIGN TO FINFET DESIGN
摘要 A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. The planar layout is analyzed and corresponding FinFET structures are generated in a matching fashion. The resulting FinFET structures are then optimized. Dummy patterns and a new metal layer may be generated before the FinFET layout is verified and outputted.
申请公布号 US2012278781(A1) 申请公布日期 2012.11.01
申请号 US201213416907 申请日期 2012.03.09
申请人 WANN CLEMENT HSINGJEN;CHANG CHIH-SHENG;LIN YI-TANG;SHIEH MING-FENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WANN CLEMENT HSINGJEN;CHANG CHIH-SHENG;LIN YI-TANG;SHIEH MING-FENG
分类号 G06F17/50 主分类号 G06F17/50
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