| 发明名称 |
Scalable nonvolatile memory |
| 摘要 |
Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density. |
| 申请公布号 |
US8300455(B2) |
申请公布日期 |
2012.10.30 |
| 申请号 |
US201113028710 |
申请日期 |
2011.02.16 |
| 申请人 |
TOROK E. JAMES;FLEMING DAVID LESLIE;WUORI EDWARD;SPITZER RICHARD;INTEGRATED MAGNETOELECTRONICS |
发明人 |
TOROK E. JAMES;FLEMING DAVID LESLIE;WUORI EDWARD;SPITZER RICHARD |
| 分类号 |
G11C11/14 |
主分类号 |
G11C11/14 |
| 代理机构 |
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