| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of an oxide film of a semiconductor substrate and an impurity analysis method for the semiconductor substrate, which is capable of executing impurity analysis of an extremely surface layer part of the semiconductor substrate with high sensitivity and high accuracy. <P>SOLUTION: In the oxide film formation method of the semiconductor substrate, one main surface of the semiconductor substrate is oppositely arranged in parallel with a liquid level of an ammonia solution, and the semiconductor substrate and the ammonia solution are left at a room temperature in a state that a distance between the liquid level of the ammonia solution and the one main surface of the semiconductor substrate is even. In the method, it is also desirable that the one main surface of the semiconductor substrate is composed of any one of silicon and gallium nitride, the distance between the liquid level of the ammonia solution and the one main surface of the semiconductor substrate is 3 mm or more to 20 mm or less, leaving time is 60 min or more to 400 min or less, and the concentration of the ammonia solution is 15 wt.% or more to 35 wt.% or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
