发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of easily realizing formation of a through electrode at a chip and connection between the through electrodes. <P>SOLUTION: A plurality of semiconductor substrates are prepared in which a through hole that penetrates between main surfaces is formed and the through hole is filled with a porous conductor. The plurality of semiconductor substrates are stacked with the porous conductors packed in the through hole being aligned. A conductor ink containing granular conductor is introduced into the porous conductor of the plurality of semiconductor substrates having been stacked. The plurality of stacked semiconductor substrates are baked. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209424(A) 申请公布日期 2012.10.25
申请号 JP20110074001 申请日期 2011.03.30
申请人 TOKYO ELECTRON LTD 发明人 NAKAO MASARU;HARADA MUNEO;IIDA ITARU;YAMAGUCHI EIJI
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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