发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of easily realizing formation of a through electrode at a chip and connection between the through electrodes. <P>SOLUTION: A plurality of semiconductor substrates are prepared in which a through hole that penetrates between main surfaces is formed and the through hole is filled with a porous conductor. The plurality of semiconductor substrates are stacked with the porous conductors packed in the through hole being aligned. A conductor ink containing granular conductor is introduced into the porous conductor of the plurality of semiconductor substrates having been stacked. The plurality of stacked semiconductor substrates are baked. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012209424(A) |
申请公布日期 |
2012.10.25 |
申请号 |
JP20110074001 |
申请日期 |
2011.03.30 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
NAKAO MASARU;HARADA MUNEO;IIDA ITARU;YAMAGUCHI EIJI |
分类号 |
H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|