| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflective mask used for extreme-ultraviolet (EUV) lithography, which will not be damaged or will not vary in optical characteristics by processing of an absorption layer and a multi-layered reflective layer, and has high light-shield properties. <P>SOLUTION: In an outer periphery portion of a circuit pattern region of a reflective mask, a light-shield region, formed of a separate member, is provided. Thereby, a reflective mask including a light-shield frame with high light-shield properties can be provided through a simple process, without involving complex processing or handling. <P>COPYRIGHT: (C)2013,JPO&INPIT |
