| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an implantation method, in which, when a wafer is divided into a plurality of implantation regions in the mechanical scan direction, and the beam scanning speed is varied for every implantation region, thus controlling the ion implantation amount in the wafer, the target ion implantation distribution and the ion implantation amount are realized for every implantation region while fixing together the beam scan frequency and the beam scan amplitude in the respective implantation regions. <P>SOLUTION: The ion implantation amount in each implantation region in the wafer surface is controlled by performing change control of the beam scanning speed based on a speed pattern calculated by variably setting the beam scanning speed corresponding to the ion implantation distribution in every implantation region, and controlling the wafer scanning speed for every implantation region, and the beam scan frequency and the beam scan amplitude in controlling of the beam scanning speed for every implantation region are made uniform, thereby realizing the ion implantation having desired ion implantation amount distribution in each implantation region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
