发明名称 QUANTUM WELL GRAPHENE STRUCTURE FORMED ON A DIELECTRIC LAYER HAVING A FLAT SURFACE
摘要 An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low density of charged defects that can lead to scattering of charge carriers in the graphene layer. The high dielectric constant of the layers surrounding the graphene layer also prevents charge carrier scattering by minimizing interaction between the charge carriers and the changed defects in the surrounding layers. An interracial layer constructed of a thin, non-polar, dielectric material can also be provided between the graphene layer and each of the highly ordered crystalline high dielectric constant layers to minimize charge carrier scattering in the graphene layer through remote interfacial phonons.
申请公布号 US2012261640(A1) 申请公布日期 2012.10.18
申请号 US201213532679 申请日期 2012.06.25
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 MARINERO ERNESTO E.;PISANA SIMONE
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项
地址