| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can obtain a sufficient erasing speed and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises: a substrate; a first stack; a memory film; a first channel body; a second stack; a gate insulating film; and a second channel body. Step portions are each formed between a side surface of a selection gate and a second insulating layer. The film thickness of the second channel body at the portion covering the step portion is thicker than that of the portion provided between the second insulating layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012195424(A) |
申请公布日期 |
2012.10.11 |
| 申请号 |
JP20110057937 |
申请日期 |
2011.03.16 |
| 申请人 |
TOSHIBA CORP |
发明人 |
ISHIZUKI MEGUMI;SATO MITSURU;KATSUMATA RYUTA;KITO MASARU;TANAKA HIROYASU;OSAWA TOMO |
| 分类号 |
H01L27/115;H01L21/336;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L27/115 |
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