| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing decrease in thickness of an oxide film in a cleaning step performed after ion implantation. <P>SOLUTION: There is provided a method of manufacturing a semiconductor device comprising: step (a) of forming an oxide film on a semiconductor substrate; step (b) of implanting first impurities containing a first element into a first region of the semiconductor substrate after the step (a), and then cleaning the semiconductor substrate and the oxide film; and step (c) of implanting second impurities containing a second element, which is larger in mass than the first element, into a second region of the semiconductor substrate after the step (b), and then cleaning the semiconductor substrate and the oxide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
