发明名称 Fully-buffered dual in-line memory module with fault correction
摘要 A memory circuit including a logic circuit, content addressable memory, and a multiplexer. The logic circuit is configured to output a first address. The content addressable memory is configured to i) receive the first address and ii) output a substitute address and a match signal if the first address matches a second address stored in the content addressable memory. The multiplexer is configured to i) receive the first address and the substitute address and ii) selectively output one of the first address and the substitute address based on the match signal.
申请公布号 US8281191(B2) 申请公布日期 2012.10.02
申请号 US20100903606 申请日期 2010.10.13
申请人 SUTARDJA SEHAT;AZIMI SAEED;MARVELL WORLD TRADE LTD. 发明人 SUTARDJA SEHAT;AZIMI SAEED
分类号 G11C29/00 主分类号 G11C29/00
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