发明名称 FLOATING-BODY DRAM TRANSISTOR COMPRISING SOURCE/DRAIN REGIONS SEPARATED FROM THE GATED BODY REGION
摘要 A semiconductor device along with circuits including the same and methods of operating the same are described. The device includes an electrically floating body region, and a gate is disposed over a first portion of the body region. The device includes a source region adjoining a second portion of the body region, the second portion adjacent the first portion and separating the source region from the first portion. The device includes a drain region adjoining a third portion of the body region, the third portion adjacent the first portion and separating the drain region from the first portion.
申请公布号 KR20120107015(A) 申请公布日期 2012.09.27
申请号 KR20127021669 申请日期 2008.01.24
申请人 MICRON TECHNOLOGY, INC. 发明人 OKHONIN SERGUEI
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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