发明名称 SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor module includes a high frequency chip, an insulating cap, a through electrode, interconnections, and an insulating layer. The insulating cap forms a hollow with the chip to cover the chip. The through electrode passes through a first plane of the cap and a second plane of the cap, the first plane facing the chip, the second plane being on a side opposite to the first plane. The interconnections are provided on the cap and connected to the through electrode. The insulating layer is provided on the cap and fills a portion between the interconnections therewith.
申请公布号 US2012228755(A1) 申请公布日期 2012.09.13
申请号 US201113235386 申请日期 2011.09.18
申请人 NAGANO TOSHIHIKO;YAMADA HIROSHI;ABE KAZUHIDE;ITAYA KAZUHIKO;NAKADA TAIHEI;KABUSHIKI KAISHA TOSHIBA 发明人 NAGANO TOSHIHIKO;YAMADA HIROSHI;ABE KAZUHIDE;ITAYA KAZUHIKO;NAKADA TAIHEI
分类号 H01L23/053;H01L21/56 主分类号 H01L23/053
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