发明名称 |
METHOD FOR MANUFACTURING A MOLYBDENUM SPUTTERING TARGET FOR A BACK SURFACE ELECTRODE OF A CIGS SOLAR CELL |
摘要 |
The present invention relates to a method for manufacturing a molybdenum sputtering target for a back surface electrode of a CIGS solar cell. The method for manufacturing the molybdenum sputtering target includes: a step of filling molybdenum powder into a mold formed of a graphite material; a step of mounting the mold, in which the molybdenum powder is filled, inside a chamber of a discharge plasma sintering device; a step of forming a vacuum state inside the chamber; a step of increasing the temperature of the molybdenum powder within the mold according to a preset temperature increase pattern in a state where the molybdenum powder is maintained under a predetermined pressure to perform a formation process until the temperature of the molybdenum power reaches a final target temperature; a step of further maintaining the final target temperature for about 1 minute to 10 minutes; and a step of cooling the inside of the chamber while maintaining the predetermined pressure. According to the method for manufacturing the molybdenum sputtering target for a CIGS solar cell, when a sintered body suitable for the sputtering target is manufactured using a discharge plasma sintering process, high density may be achieved. Also, since a single process is performed for a short time, a sintered body having a uniform structure and high purity without causing particle growth may be manufactured. |
申请公布号 |
WO2012121542(A2) |
申请公布日期 |
2012.09.13 |
申请号 |
WO2012KR01653 |
申请日期 |
2012.03.07 |
申请人 |
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY;OH, IK HYUN;PARK, HYUN KUK;LEE, SEUNG MIN;YANG, JUN MO |
发明人 |
OH, IK HYUN;PARK, HYUN KUK;LEE, SEUNG MIN;YANG, JUN MO |
分类号 |
C23C14/34;B22F3/10;C23C14/14;H01L31/042 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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