发明名称 VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARD FRAME-TYPE ELECTRODE AND EQUIPMENT THEREOF
摘要 The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
申请公布号 EP2498304(A2) 申请公布日期 2012.09.12
申请号 EP20100827985 申请日期 2010.10.29
申请人 SEMILEDS OPTOELECTRONICS CO., LTD. 发明人 CHU, CHEN FU;LIU, WEN HUANG;CHENG, HAO CHUN
分类号 H01L33/38;H01L33/44;H01L33/46;H01L33/48;H01L33/50;H01L33/62 主分类号 H01L33/38
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