SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device, a manufacturing method thereof, and an electronic device including the semiconductor device are provided to produce a high performance and reliability semiconductor device having excellent performance characteristics. CONSTITUTION: A channel layer(C1) is formed on a predetermined substrate(SUB1). The channel layer includes a plurality of unit layers(L1,L2,L3) which is separated in a vertical direction. Insulating layers(IN1,IN2) are formed between the plurality of unit layers. A source electrode(S1) and a drain electrode(D1) respectively contact both ends of the channel layer. A gate(G1) controls the electrical characteristic of the channel layer.