发明名称 |
Fin FET and method of fabricating same |
摘要 |
A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode. |
申请公布号 |
US8264034(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US201113178308 |
申请日期 |
2011.07.07 |
申请人 |
KIM KEUN-NAM;YANG HUNG-MO;LEE CHOONG-HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KEUN-NAM;YANG HUNG-MO;LEE CHOONG-HO |
分类号 |
H01L27/088;H01L21/336;H01L29/76;H01L29/786 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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