发明名称 SENSE AMPLIFIER CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a sense amplifier circuit capable of acceleration without increasing power consumption as much as possible. <P>SOLUTION: In the sense amplifier circuit including a latch circuit formed by connecting two inverters, and two transistors for precharge inserted between a bit line and each output node of the latch circuit to perform precharge operation in response to a sense amplifier activation signal, precharge operation is accelerated by applying predetermined voltage between a substrate and a source of each transistor for precharge, using a substrate bias effect of the transistor and lowering threshold voltage. An inverter circuit for inverting a sense amplifier activation signal or the inversion signal thereof and applying the inverted signal to the substrate of each transistor for precharge is provided, an nMOSFET source terminal of each inverter circuit is connected to an output node of the latch circuit, and reuses substrate leak current caused to flow to the output node from the substrate of each transistor for precharge through an nMOSFET during precharging. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174318(A) 申请公布日期 2012.09.10
申请号 JP20110037119 申请日期 2011.02.23
申请人 HANDOTAI RIKOUGAKU KENKYU CENTER:KK 发明人 HIROSE TETSUYA;MASUDA CHOTARO
分类号 G11C11/419 主分类号 G11C11/419
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