发明名称 |
NOVEL GAP FILL INTEGRATION |
摘要 |
Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods. |
申请公布号 |
KR20120099243(A) |
申请公布日期 |
2012.09.07 |
申请号 |
KR20127013775 |
申请日期 |
2010.12.09 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
ASHTIANI KAIHAN;WOOD MICHAEL;DREWERY JOHN;SHODA NAOHIRO;VAN SCHRAVENDIJK BART;NITTALA LAKSHMINARAYANA;DRAEGER NERISSA |
分类号 |
H01L21/316;H01L21/205;H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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