<p>A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.(Figure 2A)</p>
申请公布号
SG183018(A1)
申请公布日期
2012.08.30
申请号
SG20120051389
申请日期
2008.06.20
申请人
LAM RESEARCH CORPORATION
发明人
YUN, SEOKMIN;WILCOXSON, MARK;ZHU, JI;CHUANG, KEVIN;CHANG, HSIAO, WEI;LOU, DAVID