PURPOSE: A display device is provided to operate a shift resister at high speed when the display device uses amorphous silicon as a semiconductor layers. CONSTITUTION: A first electrode of a second transistor(102) is electrically connected to a sixth wiring(506). A first electrode of a fourth transistor(104) is electrically connected to the sixth wiring. A first electrode of a sixth transistor(106) is electrically connected to the sixth wiring. A first electrode of a seventh transistor(107) is electrically connected to the sixth wiring. A first electrode of a eighth transistor(108) is electrically connected to the sixth wiring. A first electrode of a fifth transistor(105) is electrically connected to a fifth wiring(505). A first electrode of a third transistor(103) is electrically connected to the fifth wiring.
