| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing an indium nitride-containing semiconductor layer which is excellent in its crystallinity, and electric and optical characteristics, etc. <P>SOLUTION: The method for growing an indium nitride-containing semiconductor layer comprises the steps of: forming indium hydride by causing hydrogen atoms resulting from the decomposition by plasma to react with an indium source including indium metal or indium-containing compound; forming nitrogen atoms by decomposing nitrogen with plasma; and forming an indium nitride-containing semiconductor layer on a substrate by causing the indium hydride and the nitrogen atoms to react with each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
