发明名称 |
Field-effect transistor and sensor based on the same |
摘要 |
A field-effect transistor has at least one electrode disposed independently of source and drain electrodes and in direct contact with the surface of a semiconductor channel to form a schottky barrier, so that it is possible to easily control the schottky barrier. |
申请公布号 |
US8247797(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20100814824 |
申请日期 |
2010.06.14 |
申请人 |
HONG SEUNG HUN;KIM BYEONG JU;LEE MOON SOOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG SEUNG HUN;KIM BYEONG JU;LEE MOON SOOK |
分类号 |
H01L29/775;H01L29/78 |
主分类号 |
H01L29/775 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|