| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element almost free from noise. <P>SOLUTION: A semiconductor element comprises: a first semiconductor layer; a second semiconductor layer; a third semiconductor layer; a fourth semiconductor layer; a first control electrode contacting the first semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer via a first insulating film; an extraction electrode electrically connected to the first control electrode; a second control electrode and a third control electrode that are electrically connected to the extraction electrode and face the second semiconductor layer via a second insulating film under the extraction electrode; a first main electrode connected to the first semiconductor layer; and a second main electrode connected to the third semiconductor layer and the fourth semiconductor layer. The third semiconductor layer is not provided on a surface of the second semiconductor layer under the extraction electrode. At least a portion of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than that of the third control electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
