发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A field drain insulating part has a first insulating film and a high dielectric constant insulating film. The first insulating film is positioned at least in the center of the field drain insulating part in a plan view. The high dielectric constant insulating film is positioned at a part close to a drain region in the edge of the bottom surface of the field drain insulating part, and has a higher dielectric constant than the first insulating film. The high dielectric constant insulating film is not positioned in the center of the field drain insulating part in a plan view.
申请公布号 US2012199904(A1) 申请公布日期 2012.08.09
申请号 US201213359098 申请日期 2012.01.26
申请人 SASAKI KENJI;RENESAS ELECTRONICS CORPORATION 发明人 SASAKI KENJI
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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