THIN-FILM TRANSISTOR, ACTIVE MATRIX SUBSTRATE, AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide a TFT and an active matrix substrate having a wide selection range of materials and high productivity, and to provide a method of manufacturing them.

SOLUTION: A thin-film transistor according to the present invention comprises: a gate electrode 2; a semiconductor layer 5; and a source electrode 7 and a drain electrode 8 that are provided on the semiconductor layer 5 and are electrically connected to the semiconductor layer 5. The semiconductor layer 5 has a translucent semiconductor film 5a and an ohmic conductive film 5b that is disposed on the translucent semiconductor film 5a and has a lower light transmittance than the translucent semiconductor film 5a. The ohmic conductive film 5b is formed not to protrude from the translucent semiconductor film 5a. The ohmic conductive film 5b is separately formed so as to sandwich a channel portion 9 between the source electrode 7 and the drain electrode 8. The source electrode 7 and the drain electrode 8 are connected to the translucent semiconductor film 5a via the ohmic conductive film 5b.

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