发明名称 SILICON NITRIDE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: Silicon nitride and a method for manufacturing the same are provided to improve the purity of silicon nitride by forming the silicon nitride based on the reaction of organic silicide and ammonia. CONSTITUTION: A method for manufacturing silicon nitride includes the following: an organic compound containing silicon nitride is formed by stirring organic silicide and a nitrogen compound(ST10); and the organic compound is thermally treated to eliminate organic functional groups and form silicon nitride(ST20). The nitrogen compound includes at least one selected from ammonia, ammonium chloride, and ammonium fluoride. The organic silicide and the nitrogen compound are liquid. The organic silicide includes at least one selected from Me_2SiCl_2, Me_3SiCl, MeSiHCl_2, MeSiCl_3, 4-(chloromethyl)phenyl trichlorosilane, (2-methylene-1,3-propanediyl)bis(trichlorosilane), (3-chloropropyl) trimethoxysilane, and 1,2-bis(trichlorosilyl)ethane.
申请公布号 KR20120088455(A) 申请公布日期 2012.08.08
申请号 KR20110009813 申请日期 2011.01.31
申请人 LG INNOTEK CO., LTD. 发明人 KIM, MYEONG JEONG;KIM, SANG MYUNG
分类号 C01B21/068;C04B35/584 主分类号 C01B21/068
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