发明名称 A CONNECT STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
摘要 PURPOSE: A manufacturing method of a connect structure and a manufacturing method of a semiconductor device using the same are provided to form a connection wire on a predetermined position by using a coupling structure. CONSTITUTION: A sacrificing layer(30) and an inter-layer insulating layer(20) are repeatedly laminated on a substrate. Sidewall blocking patterns(46a-46g) are formed on sidewalls of etch mask patterns. A first photo resist pattern, which selectively exposes a first sidewall blocking pattern on an edge, is formed. The sacrificing layer and the inter-layer insulating layer are etched by using the first photo resist pattern and the etch mask pattern. A second photoresist pattern is formed by eliminating a part of the first photo resist pattern and the etch mask pattern. A coupling structure is formed by etching the exposed sacrificing layer and the inter-layer insulating layer.
申请公布号 KR20120084396(A) 申请公布日期 2012.07.30
申请号 KR20110005728 申请日期 2011.01.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YU, HAN GEUN;MIN, GYUNG JIN;LEE, SEONG SOO;JOO, SUK HO;KONG, YOO CHUL;JANG, DAE HYUN
分类号 H01L21/768;H01L21/027 主分类号 H01L21/768
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