| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an SOI wafer in which the charging of a support substrate wafer of the SOI wafer can be removed. <P>SOLUTION: The method of manufacturing an SOI wafer includes an oxide film formation step for forming an oxide film 22 on the bonding surface of an active layer substrate 10 and a support substrate 20, a step for bonding the active layer substrate 10 and the support substrate 20, a trench formation step for forming a trench in the active layer substrate 10 toward the support substrate 20 until reaching the oxide film 22, an ion injection step for injecting predetermined ions from the trench toward the oxide film 22, and a filling step for filling the trench with polysilicon 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
