发明名称 |
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED DOPED REGIONS AND METHODS OF MAKING |
摘要 |
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.
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申请公布号 |
US2012187421(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201213434976 |
申请日期 |
2012.03.30 |
申请人 |
CHENG LIN;MAZZOLA MICHAEL;SEMISOUTH LABORATORIES, INC. |
发明人 |
CHENG LIN;MAZZOLA MICHAEL |
分类号 |
H01L29/161 |
主分类号 |
H01L29/161 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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