| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a support substrate for epitaxial growth, which allow a semiconductor device to be manufactured at excellent yield by addition of appropriate treatment to the support substrate even if the support substrate has an intermediate layer partially being exposed. <P>SOLUTION: A present semiconductor device manufacturing method comprises: a step of forming a support substrate 2, which includes a base substrate 10 capable of achieving epitaxial growth of at least one layer of a group-III nitride semiconductor layer 40, an intermediate layer 20 arranged on an entire surface of the base substrate 10 and a GaN layer 30a arranged on a part of the intermediate layer 20, and in which the GaN layer 30a and a part of the intermediate layer 20 is exposed; a step of exposing a part of the base substrate 10 by selectively removing exposed portions 20p, 20q, 20r of the intermediate layer 20 of the support substrate 2; and a step of achieving epitaxial growth of the group-III nitride semiconductor layer on the GaN layer 30a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
